? ? ? ? guilin strong micro-electronics co.,ltd. gm b624 features c pnp low frequency amplifier transistor maximum ratings (t a =25 ) ~? characteristic ? symbol ? rating ~? unit collector-base voltage ?O - O? v cbo -3 0 v collector-emitter voltage ?O - lO? v ceo -25 v emitter-base voltage lO - O? v ebo - 5 v collector current-continuous ?O - Bm ic -70 0 ma collector power dissipation ?O? p c 225 mw junction temperature Y t j 150 storage temperature range ? t stg -55 ? 150 device marking gm b624(2sb624) mark bv1 bv2 bv3 bv4 bv5 h fe 1 110~180 135~220 170~270 200~320 250~400
? ? ? ? guilin strong micro-electronics co.,ltd. g mb624 electrical characteristics (t a =25 unless otherwise noted of , ?? 25 ) characteristic ? symbol ? test condition y?l min ? t yp ? max ? unit collector cutoff current ?O? i cbo v cb = -3 0v, i e =0 - 0.1 a emitter cutoff current lO? i ebo v eb = - 5v, i c =0 - 0.1 a collector-base breakdown voltage ?O - O? v (br)cbo i c = - 100 a -3 0 v collector-emitter breakdown voltage ?O - lO? v (br)ceo i c = - 1.0ma -25 v emitter-base breakdown vol t age lO - O? v (br)ebo i e = - 100 a - 5 v dc current gain ? h fe 1 v ce = -1 v, i c = -100 ma 11 0 200 4 00 dc current gain ? h fe 2 v ce = -1 v, i c = -700 ma 5 0 collector-emitter saturation voltage ?O - lO?? v ce(sat) i c = -7 00ma, i b = -7 0ma -0.25 - 0. 6 v base-emitter saturation voltage O - lO?? v b e(sat) i c = -7 00ma, i b = -7 0ma - 1.0 - 1.2 v base-emitter saturation O - lO? v be v ce = -6 v, i c = - 10ma -0.6 -0.64 - 0. 7 v transition frequency l f t v ce = -6 v, i c = - 10ma 1 6 0 mhz collector output capacitance ? c ob v cb = -6 v,i e =0, f=1mhz 17 pf
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